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DTSTART;TZID=America/New_York:20260603T120000
DTEND;TZID=America/New_York:20260603T130000
DTSTAMP:20260512T152913Z
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SUMMARY:Technical Webinar – David Graves\, Ph.D.\, Texas Tech University
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, June 3\, from Noon to 1 p.m. (EDT) \nTopic: Design and Simulations of a High Voltage SiC Semiconductor Opening Switch Diode \nPresenter: David Graves\, Ph.D.\, Texas Tech University \nBio: Presenter Bio Dr. David Graves received his B.S.\, M.S.\, and Ph.D. degrees in electrical engineering from Texas Tech University. While at Texas Tech University\, he conducted research with the Center for Pulsed Power and Power Electronics lab\, focusing on the characterization and Technology Computer-Aided Design (TCAD) modeling of Silicon Carbide (SiC) Drift Step Recovery Diodes (DSRDs) and Semiconductor Opening Switch (SOS) Diodes. Upon completing his doctoral studies\, David transitioned to a joint postdoctoral research associate position at the Global Laboratory for Energy Asset Management and Manufacturing (GLEAMM) and the Critical Infrastructure Security Institute (CISI) at Texas Tech University. In this role\, he assessed cyber-physical vulnerabilities in grid-oriented systems to develop mitigation methods that could be deployed to enhance the system’s resilience and reliability. In 2025\, he joined CISI as a SCADA engineer to further investigate cyber vulnerabilities in OT environments\, building on his prior work in energy systems. David also serves as an instructor with the Department of Electrical Computer Engineering at Texas Tech\, teaching courses on semiconductor power devices and power converter design. \nAbstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes\, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon\, thus increasing system reliability\, efficiency\, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD)\, the design of the ultra-high voltage SiC SOS device\, several single-device testbed simulations\, and the successful simulation of a five-device series stack delivering a 100 kV\, 180 MW pulse.\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-david-graves/
CATEGORIES:Webinars
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=America/New_York:20260506T120000
DTEND;TZID=America/New_York:20260506T130000
DTSTAMP:20260512T161012Z
CREATED:20260512T160800Z
LAST-MODIFIED:20260512T161012Z
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SUMMARY:Technical Webinar – Tadao Hashimoto\, CEO\, Six Point Materials
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, May 6\, from Noon to 1 p.m. (EDT) \nTopic: Current Status and Prospects of Native GaN Substrate Development by Ammonothermal Method \nPresenter: Tadao Hashimoto\, Ph.D.\, MBA\nCEO\, Six Point Materials \nBio: Tadao Hashimoto joined Professor Matsunami’s laboratory at Kyoto University in 1990. He was awarded a Bachelor of Electrical Engineering in 1991 and a master of electrical engineering in 1993 from Kyoto University. In 1993\, he joined Panasonic and worked for 6 years as a research engineer of semiconductor lasers and metal organic chemical vapor deposition (MOCVD) of GaAs-based alloys and GaN-based alloys. From 1997 to 1999\, he stayed at Stanford University as a visiting researcher working on hydride vapor phase epitaxy (HVPE) of GaN. In 1999\, he left Panasonic\, and in 2000 he started his Ph.D study at the University of California\, Santa Barbara. He joined the ERATO Nakamura Inhomogeneous Crystal Project and started research on the ammonothermal growth of GaN. In 2005\, he was awarded Ph.D in materials science from UCSB. He is the founder of SixPoint Materials\, Inc. He also completed an online MBA at University of Nebraska\, Lincoln\, in 2020 with an emphasis on international business. \nAbstract: This presentation will outline the development history of native GaN substrates and update the current status of the development by SixPoint’s near equilibrium ammonothermal (NEAT) method. Also\, prospects of native GaN substrate development will be provided.\n\n\n\n\n\n\n\n\n\n\n\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-tadao-hashimoto-ceo-six-point-materials/
CATEGORIES:Webinars
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BEGIN:VEVENT
DTSTART;TZID=America/New_York:20251105T120000
DTEND;TZID=America/New_York:20251105T130000
DTSTAMP:20251006T165056Z
CREATED:20251006T165030Z
LAST-MODIFIED:20251006T165056Z
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SUMMARY:Technical Webinar – Dr. Arash Salemi
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, November 5\, from Noon to 1 p.m. (EDT) \nTopic: 3300 V & 2300 V SiC Trench-Assisted Planar MOSFETs and Compact Power Modules with Epoxy-Resin Potting Technology for Energy Infrastructure Applications \nPresenter: Dr. Arash Salemi\, Senior Manager of Technical Marketing and SiC Technology at Navitas Semiconductor \nDr. Arash Salemi is the Senior Manager of Technical Marketing and SiC Technology at Navitas Semiconductor. Dr. Salemi’s industrial experience includes senior technical marketing and SiC device design roles at onsemi and Alpha and Omega Semiconductor. He holds a Ph.D. from KTH Royal Institute of Technology\, where he developed a wide range of 4.5 kV to 15 kV SiC BJTs and PiN diodes. \nHis research background features postdoctoral work at Purdue University (trench-SiC MOSFETs) and the Ohio State University (SiC MOSFETs reliability). While at the OSU\, he also co-developed a freely accessible online video course on Si and WBG Power Devices for the Consortium of Universities for Sustainable Power (CUSP). \nDr. Salemi holds two M.Sc. degrees\, one in Physics and one in Nanotechnology. He was on the organization committee in ICSCRM 2024 and served as the technical editor for the proceedings. \nAbstract: Navitas Semiconductor is advancing the next generation of mission-critical high-voltage Wide Bandgap (WBG) power semiconductor technology\, which is enabling the modernization of energy infrastructure in data centers\, utility-scale battery energy storage systems (BESS)\, EV megawatt charging systems (MCS)\, and renewable energy systems like solar and wind. This presentation details our state-of-the-art new generation 3300 V and 2300 V SiC MOSFETs\, highlighting the benefits of our novel GeneSiC™ Trench-Assisted Planar (TAP) architecture and compact SiCPaK™ power modules with epoxy-resin potting technology – essential for highly efficient and reliable power electronics systems.Furthermore\, we will present a technical preview to showcase further expansion into higher-voltage power semiconductor technologies\, including the results of our 6500 V SiC MOSFETs – demonstrating Navitas’ commitment to enabling future generations of power electronic systems. \n\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-dr-arash-salemi/
CATEGORIES:Webinars
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DTSTART;TZID=America/New_York:20241204T120000
DTEND;TZID=America/New_York:20241204T130000
DTSTAMP:20241107T191208Z
CREATED:20241107T190857Z
LAST-MODIFIED:20241107T191208Z
UID:10000002-1733313600-1733317200@poweramericainstitute.org
SUMMARY:Virtual Webinar: GaN FET – based Compact Converters for Pulsed Power Applications
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, Dec. 4 from 12:00pm – 1:00pm EST \nTopic: GaN FET – based Compact Converters for Pulsed Power Applications \nPresenter: Dr. Harish Krishnamoorthy \nDr. Harish S. Krishnamoorthy\, a Senior IEEE Member and Associate Professor at the University of Houston\, holds a B.Tech. in Electrical and Electronics Engineering from NIT Tiruchirappalli and a Ph.D. in Electrical and Computer Engineering from Texas A&M University. He has extensive industry experience with GE\, Schlumberger\, Ford\, and Google\, has published over 110 research papers\, and holds two U.S. patents. \nAn active IEEE conference organizer and Associate Editor for IEEE Transactions on Power Electronics\, he has received numerous awards\, including the NSF CAREER Award. His research\, supported by projects totaling approximately $10 million\, focuses on wide-bandgap semiconductor power systems for renewable energy\, electrified transportation\, and energy system reliability. \nAbstract: The presentation will explore the design of power converters for pulsed power applications\, focusing on high-energy\, fast-response\, and high-density power needs in fields like aerospace\, defense\, and medical technology. Starting with an overview of major applications\, the talk will dive into radar and NMR spectroscopy\, examining their unique power conversion demands. A 2-stage converter architecture using GaN HEMTs will be detailed\, highlighting the isolated and non-isolated stages tailored for these high-performance applications. Key challenges\, such as creating compact (100 W/in³)\, rapid-response (<1 µs)\, and high-temperature (>150°C) capable designs\, will also be discussed. \nZoom Webinar Link
URL:https://poweramericainstitute.org/event/virtual-webinar-gan-fet-based-compact-converters-for-pulsed-power-applications/
CATEGORIES:Webinars
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=America/New_York:20241106T120000
DTEND;TZID=America/New_York:20241106T130000
DTSTAMP:20241007T201235Z
CREATED:20241007T201146Z
LAST-MODIFIED:20241007T201235Z
UID:10000001-1730894400-1730898000@poweramericainstitute.org
SUMMARY:Virtual Webinar: Meeting the Reliability Challenges of HV Electronic Assemblies
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, Nov. 6 from 12:00pm – 1:00pm EST \nTopic: Meeting the Reliability Challenges of HV Electronic Assemblies \nPresenter: Dr. Olaf Schoenfeld \nDr. Olaf Schoenfeld has been a key figure at ZESTRON since 2009\, specializing in cleanliness solutions for electronic assemblies\, particularly in high-voltage applications for electromobility and charging stations. \nWith a background in experimental semiconductor physies\, Dr. Schoenfeld started his career at Siemens\, developing quantum devices for high-brightness LEDs\, now used in vehicle lighting. He later contributed to market launches at Infineon Technologies\, including high-speed transceivers\, communication chips\, and high-performance computing memory systems. \nDr. Schoenfeld is a co-owner of several patents and scientific publications\, solidifying his legacy as an innovator and industry expert in the automotive and electronies industry. \nZoom Webinar Link
URL:https://poweramericainstitute.org/event/virtual-webinar-meeting-the-reliability-challenges-of-hv-electronic-assemblies/
CATEGORIES:Webinars
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