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DTSTART;TZID=America/New_York:20250730T080000
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SUMMARY:Technical Webinar – Megahertz Power Conversion for Lightweight and Power Dense Applications
DESCRIPTION:This event is free and does not require registration. Please feel free to share the link with colleagues and students. \nWhere: Online via Zoom \nWhen: Wednesday\, August 6\, from Noon to 1 p.m. (EDT) \nTopic: Megahertz Power Conversion for Lightweight and Power Dense Applications \nPresenter: Dr. Kristen Booth \nDr. Kristen Booth is an Assistant Professor at the University of South Carolina where she is researching the codesign of power electronics and power systems. She became a Joint Appointee with Savannah River National Laboratory in 2022\, and previously\, she was a Postdoctoral Researcher at The Ohio State University in the Center for High Performance Power Electronics (CHPPE). As an NSF Graduate Research Fellow\, Dr. Booth completed her Ph.D. degree from North Carolina State University in 2019. She graduated from NCSU with an M.S. in Electrical Engineering in 2017 and received a B.S.E. in Engineering Physics in 2015 from Murray State University. Dr. Booth’s research interests include resiliency and reliability of power electronics converters\, AI-integrated power electronics\, and digital twins for grid modernization and security. \nAbstract: Empty weight of a vehicle refers to the total weight of its structure and operating equipment without passengers or payload. For aerospace applications\, empty weight\, center of gravity\, and flight planning are coordinated to determine the feasibility of a flight. By reducing empty weight\, the economics of short-duration flights\, such as electric Vertical Takeoff and Landing (eVTOL) aircraft\, can be improved by replacing existing equipment weight with payload. While power electronics alone cannot improve energy storage weight\, reasonable reduction in the islanded microgrid structure is valuable to adding payload as center of gravity can be shifted outside of a narrow tolerable range\, causing instability in transitions from hovering to cruise. \nA GaN-based\, 1-MHz\, 5-kW LLC resonant converter has been experimentally verified for eVTOL battery energy storage systems. This initial prototype focuses on the challenges megahertz operation\, including radiated EMI from high slew rates while pushing the GaN devices to the edge of safe operating conditions. This seminar addresses these challenges through the design\, modeling\, and experimental validation of power converters operating at 1 MHz. Key techniques include a method to accurately determine dead time for soft switching based on GaN output charge behavior\, the use of a PCB-integrated transformer to reduce volume and improve power density\, and a thermal impedance network to estimate internal temperature rise under forced convection. The temperature dependence of GaN is also characterized to improve the conduction loss prediction. This converter weighs less than a pound\, has a power density of 40 kW/L\, and transfers the largest reported power at 1 MHz to date. The results demonstrate practical design methods to overcome switching\, thermal\, and integration challenges in higher-frequency and higher-power converters using commercially available components.
URL:https://poweramericainstitute.org/event/technical-webinar-megahertz-power-conversion-for-lightweight-and-power-dense-applications/
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BEGIN:VEVENT
DTSTART;VALUE=DATE:20251014
DTEND;VALUE=DATE:20251016
DTSTAMP:20260528T192039
CREATED:20250923T174532Z
LAST-MODIFIED:20250923T185719Z
UID:10000006-1760400000-1760572799@poweramericainstitute.org
SUMMARY:Manufacturing Month Workshop
DESCRIPTION:Credentialing for Tomorrow’s Workforce: How SACA Bridges Education and Industry\n\n\nPowerAmerica is pleased to host a special virtual workshop during the National Manufacturing Month in partnership with the Smart Automation Certification Alliance (SACA). This session will explore how nationally recognized\, industry-driven micro-credentials can accelerate workforce development for the semiconductor and power electronics sectors. \nSACA will share how their stackable credentials create clear\, flexible pathways for students\, technicians\, and veterans to enter high-demand careers in advanced manufacturing. Attendees will gain practical insights on: \n\nHow micro-credentialing aligns with workforce priorities.\nCase studies of successful integration at community colleges and training centers.\nStrategies for building talent pipelines that meet industry-validated standards.\nOpportunities for PowerAmerica members and partners to incorporate credentialing into their programs.\n\nThis workshop is designed for industry members\, community colleges\, universities\, and training providers interested in bridging the gap between education and workforce needs in the semiconductor supply chain. \nThe workshop is free to attend\, but registration is required. \n\nView Agenda  \nRegister Now
URL:https://poweramericainstitute.org/event/manufacturing-month-workshop/
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DTSTART;TZID=America/New_York:20251105T120000
DTEND;TZID=America/New_York:20251105T130000
DTSTAMP:20260528T192039
CREATED:20251006T165030Z
LAST-MODIFIED:20251006T165056Z
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SUMMARY:Technical Webinar – Dr. Arash Salemi
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, November 5\, from Noon to 1 p.m. (EDT) \nTopic: 3300 V & 2300 V SiC Trench-Assisted Planar MOSFETs and Compact Power Modules with Epoxy-Resin Potting Technology for Energy Infrastructure Applications \nPresenter: Dr. Arash Salemi\, Senior Manager of Technical Marketing and SiC Technology at Navitas Semiconductor \nDr. Arash Salemi is the Senior Manager of Technical Marketing and SiC Technology at Navitas Semiconductor. Dr. Salemi’s industrial experience includes senior technical marketing and SiC device design roles at onsemi and Alpha and Omega Semiconductor. He holds a Ph.D. from KTH Royal Institute of Technology\, where he developed a wide range of 4.5 kV to 15 kV SiC BJTs and PiN diodes. \nHis research background features postdoctoral work at Purdue University (trench-SiC MOSFETs) and the Ohio State University (SiC MOSFETs reliability). While at the OSU\, he also co-developed a freely accessible online video course on Si and WBG Power Devices for the Consortium of Universities for Sustainable Power (CUSP). \nDr. Salemi holds two M.Sc. degrees\, one in Physics and one in Nanotechnology. He was on the organization committee in ICSCRM 2024 and served as the technical editor for the proceedings. \nAbstract: Navitas Semiconductor is advancing the next generation of mission-critical high-voltage Wide Bandgap (WBG) power semiconductor technology\, which is enabling the modernization of energy infrastructure in data centers\, utility-scale battery energy storage systems (BESS)\, EV megawatt charging systems (MCS)\, and renewable energy systems like solar and wind. This presentation details our state-of-the-art new generation 3300 V and 2300 V SiC MOSFETs\, highlighting the benefits of our novel GeneSiC™ Trench-Assisted Planar (TAP) architecture and compact SiCPaK™ power modules with epoxy-resin potting technology – essential for highly efficient and reliable power electronics systems.Furthermore\, we will present a technical preview to showcase further expansion into higher-voltage power semiconductor technologies\, including the results of our 6500 V SiC MOSFETs – demonstrating Navitas’ commitment to enabling future generations of power electronic systems. \n\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-dr-arash-salemi/
CATEGORIES:Webinars
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DTSTART;TZID=America/New_York:20260506T120000
DTEND;TZID=America/New_York:20260506T130000
DTSTAMP:20260528T192039
CREATED:20260512T160800Z
LAST-MODIFIED:20260512T161012Z
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SUMMARY:Technical Webinar – Tadao Hashimoto\, CEO\, Six Point Materials
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, May 6\, from Noon to 1 p.m. (EDT) \nTopic: Current Status and Prospects of Native GaN Substrate Development by Ammonothermal Method \nPresenter: Tadao Hashimoto\, Ph.D.\, MBA\nCEO\, Six Point Materials \nBio: Tadao Hashimoto joined Professor Matsunami’s laboratory at Kyoto University in 1990. He was awarded a Bachelor of Electrical Engineering in 1991 and a master of electrical engineering in 1993 from Kyoto University. In 1993\, he joined Panasonic and worked for 6 years as a research engineer of semiconductor lasers and metal organic chemical vapor deposition (MOCVD) of GaAs-based alloys and GaN-based alloys. From 1997 to 1999\, he stayed at Stanford University as a visiting researcher working on hydride vapor phase epitaxy (HVPE) of GaN. In 1999\, he left Panasonic\, and in 2000 he started his Ph.D study at the University of California\, Santa Barbara. He joined the ERATO Nakamura Inhomogeneous Crystal Project and started research on the ammonothermal growth of GaN. In 2005\, he was awarded Ph.D in materials science from UCSB. He is the founder of SixPoint Materials\, Inc. He also completed an online MBA at University of Nebraska\, Lincoln\, in 2020 with an emphasis on international business. \nAbstract: This presentation will outline the development history of native GaN substrates and update the current status of the development by SixPoint’s near equilibrium ammonothermal (NEAT) method. Also\, prospects of native GaN substrate development will be provided.\n\n\n\n\n\n\n\n\n\n\n\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-tadao-hashimoto-ceo-six-point-materials/
CATEGORIES:Webinars
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DTSTART;TZID=America/New_York:20260603T120000
DTEND;TZID=America/New_York:20260603T130000
DTSTAMP:20260528T192039
CREATED:20260512T152831Z
LAST-MODIFIED:20260512T152913Z
UID:10000010-1780488000-1780491600@poweramericainstitute.org
SUMMARY:Technical Webinar – David Graves\, Ph.D.\, Texas Tech University
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, June 3\, from Noon to 1 p.m. (EDT) \nTopic: Design and Simulations of a High Voltage SiC Semiconductor Opening Switch Diode \nPresenter: David Graves\, Ph.D.\, Texas Tech University \nBio: Presenter Bio Dr. David Graves received his B.S.\, M.S.\, and Ph.D. degrees in electrical engineering from Texas Tech University. While at Texas Tech University\, he conducted research with the Center for Pulsed Power and Power Electronics lab\, focusing on the characterization and Technology Computer-Aided Design (TCAD) modeling of Silicon Carbide (SiC) Drift Step Recovery Diodes (DSRDs) and Semiconductor Opening Switch (SOS) Diodes. Upon completing his doctoral studies\, David transitioned to a joint postdoctoral research associate position at the Global Laboratory for Energy Asset Management and Manufacturing (GLEAMM) and the Critical Infrastructure Security Institute (CISI) at Texas Tech University. In this role\, he assessed cyber-physical vulnerabilities in grid-oriented systems to develop mitigation methods that could be deployed to enhance the system’s resilience and reliability. In 2025\, he joined CISI as a SCADA engineer to further investigate cyber vulnerabilities in OT environments\, building on his prior work in energy systems. David also serves as an instructor with the Department of Electrical Computer Engineering at Texas Tech\, teaching courses on semiconductor power devices and power converter design. \nAbstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes\, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon\, thus increasing system reliability\, efficiency\, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD)\, the design of the ultra-high voltage SiC SOS device\, several single-device testbed simulations\, and the successful simulation of a five-device series stack delivering a 100 kV\, 180 MW pulse.\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-david-graves/
CATEGORIES:Webinars
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