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SUMMARY:Technical Webinar – David Graves\, Ph.D.\, Texas Tech University
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, June 3\, from Noon to 1 p.m. (EDT) \nTopic: Design and Simulations of a High Voltage SiC Semiconductor Opening Switch Diode \nPresenter: David Graves\, Ph.D.\, Texas Tech University \nBio: Presenter Bio Dr. David Graves received his B.S.\, M.S.\, and Ph.D. degrees in electrical engineering from Texas Tech University. While at Texas Tech University\, he conducted research with the Center for Pulsed Power and Power Electronics lab\, focusing on the characterization and Technology Computer-Aided Design (TCAD) modeling of Silicon Carbide (SiC) Drift Step Recovery Diodes (DSRDs) and Semiconductor Opening Switch (SOS) Diodes. Upon completing his doctoral studies\, David transitioned to a joint postdoctoral research associate position at the Global Laboratory for Energy Asset Management and Manufacturing (GLEAMM) and the Critical Infrastructure Security Institute (CISI) at Texas Tech University. In this role\, he assessed cyber-physical vulnerabilities in grid-oriented systems to develop mitigation methods that could be deployed to enhance the system’s resilience and reliability. In 2025\, he joined CISI as a SCADA engineer to further investigate cyber vulnerabilities in OT environments\, building on his prior work in energy systems. David also serves as an instructor with the Department of Electrical Computer Engineering at Texas Tech\, teaching courses on semiconductor power devices and power converter design. \nAbstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes\, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon\, thus increasing system reliability\, efficiency\, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD)\, the design of the ultra-high voltage SiC SOS device\, several single-device testbed simulations\, and the successful simulation of a five-device series stack delivering a 100 kV\, 180 MW pulse.\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-david-graves/
CATEGORIES:Webinars
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DTSTAMP:20260624T141338Z
CREATED:20260622T185442Z
LAST-MODIFIED:20260624T141338Z
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SUMMARY:Technical Webinar – Dr. Matt Weimer\, Forge Nano
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, July 1\, from Noon to 1 p.m. (EDT) \nTopic: Enabling WBG and UWBG Devices with High-Deposition-Rate\, Efficient ALD \nPresenter: Dr. Matt Weimer\, Forge Nano \nBio \nDr. Matt Weimer is a surface chemist specializing in atomic layer deposition (ALD) for both wafer-scale and powder applications. He began his career at the Illinois Institute of Technology\, \ncompleting a PhD in Chemistry while holding a graduate appointment at Argonne National Laboratory (ANL). His doctoral work focused on synthesizing novel ALD precursors and pioneering the use of in situ X-ray absorption spectroscopy (XAS) to elucidate surface reaction mechanisms. \nFollowing a postdoctoral appointment at ANL in fundamental battery research\, Dr. Weimer joined Lam Research in New Products Development\, contributing to next-generation process technologies. For the past five years\, he has led the wafer development team at Forge Nano\, overseeing applications development\, customer demonstrations\, and the company’s wafer-scale ALD laboratories. He played a central role in launching TEPHRA\, Forge Nano’s ALD cluster platform uniquely designed for the More-than-Moore market. \n\nAbstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes\, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon\, thus increasing system reliability\, efficiency\, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD)\, the design of the ultra-high voltage SiC SOS device\, several single-device testbed simulations\, and the successful simulation of a five-device series stack delivering a 100 kV\, 180 MW pulse. \nAbstract \nAtomic layer deposition (ALD) has repeatedly transformed microelectronics manufacturing\, from enabling high-k gate dielectrics in logic to making 3D NAND architectures possible\, by delivering high-quality\, conformal films where faster deposition techniques fall short. A similar inflection point is emerging in wide band gap (WBG) and ultra-wide band gap (UWBG) devices. ALD first entered these markets as a high-quality environmental barrier for GaN and GaAs\, but its advantages in thickness control\, conformality\, and dielectric performance are now driving broader adoption in GaN power/RF and SiC devices. As trench devices emerge and performance requirements heighten\, ALD is increasingly evaluated for roles such as high-quality dielectrics\, passivation layers\, and interface defect reduction. However\, concerns remain around whether ALD can meet high-volume manufacturing (HVM) throughput and cost targets. \n\nTo address these challenges\, Forge Nano has developed a high-efficiency\, single-wafer thermal ALD solution for 200 mm and smaller wafers\, integrated into a modern cluster platform designed for manufacturability and serviceability. Beyond established moisture-barrier applications in WBG devices\, we are advancing high-quality dielectric ALD films for GaN and SiC power electronics and extending this work to emerging UWBG materials such as diamond and Ga₂O₃. \nThis talk will highlight how the Forge Nano TEPHRA ALD cluster tool achieves higher deposition rates with significantly improved precursor utilization\, enabling cost-effective ALD for the WBG and UWBG markets. Data on moisture-barrier performance and dielectric properties on device-relevant substrates will be compared against incumbent solutions. Finally\, we will explore future device architectures and applications uniquely enabled by high-deposition rate and efficient ALD. \n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-dr-matt-weimer-forge-nano/
CATEGORIES:Webinars
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