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DTSTART;TZID=America/New_York:20260506T120000
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DTSTAMP:20260528T112737
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UID:10000011-1778068800-1778072400@poweramericainstitute.org
SUMMARY:Technical Webinar – Tadao Hashimoto\, CEO\, Six Point Materials
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, May 6\, from Noon to 1 p.m. (EDT) \nTopic: Current Status and Prospects of Native GaN Substrate Development by Ammonothermal Method \nPresenter: Tadao Hashimoto\, Ph.D.\, MBA\nCEO\, Six Point Materials \nBio: Tadao Hashimoto joined Professor Matsunami’s laboratory at Kyoto University in 1990. He was awarded a Bachelor of Electrical Engineering in 1991 and a master of electrical engineering in 1993 from Kyoto University. In 1993\, he joined Panasonic and worked for 6 years as a research engineer of semiconductor lasers and metal organic chemical vapor deposition (MOCVD) of GaAs-based alloys and GaN-based alloys. From 1997 to 1999\, he stayed at Stanford University as a visiting researcher working on hydride vapor phase epitaxy (HVPE) of GaN. In 1999\, he left Panasonic\, and in 2000 he started his Ph.D study at the University of California\, Santa Barbara. He joined the ERATO Nakamura Inhomogeneous Crystal Project and started research on the ammonothermal growth of GaN. In 2005\, he was awarded Ph.D in materials science from UCSB. He is the founder of SixPoint Materials\, Inc. He also completed an online MBA at University of Nebraska\, Lincoln\, in 2020 with an emphasis on international business. \nAbstract: This presentation will outline the development history of native GaN substrates and update the current status of the development by SixPoint’s near equilibrium ammonothermal (NEAT) method. Also\, prospects of native GaN substrate development will be provided.\n\n\n\n\n\n\n\n\n\n\n\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-tadao-hashimoto-ceo-six-point-materials/
CATEGORIES:Webinars
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DTSTART;TZID=America/New_York:20260603T120000
DTEND;TZID=America/New_York:20260603T130000
DTSTAMP:20260528T112737
CREATED:20260512T152831Z
LAST-MODIFIED:20260512T152913Z
UID:10000010-1780488000-1780491600@poweramericainstitute.org
SUMMARY:Technical Webinar – David Graves\, Ph.D.\, Texas Tech University
DESCRIPTION:Where: Online via Zoom \nWhen: Wednesday\, June 3\, from Noon to 1 p.m. (EDT) \nTopic: Design and Simulations of a High Voltage SiC Semiconductor Opening Switch Diode \nPresenter: David Graves\, Ph.D.\, Texas Tech University \nBio: Presenter Bio Dr. David Graves received his B.S.\, M.S.\, and Ph.D. degrees in electrical engineering from Texas Tech University. While at Texas Tech University\, he conducted research with the Center for Pulsed Power and Power Electronics lab\, focusing on the characterization and Technology Computer-Aided Design (TCAD) modeling of Silicon Carbide (SiC) Drift Step Recovery Diodes (DSRDs) and Semiconductor Opening Switch (SOS) Diodes. Upon completing his doctoral studies\, David transitioned to a joint postdoctoral research associate position at the Global Laboratory for Energy Asset Management and Manufacturing (GLEAMM) and the Critical Infrastructure Security Institute (CISI) at Texas Tech University. In this role\, he assessed cyber-physical vulnerabilities in grid-oriented systems to develop mitigation methods that could be deployed to enhance the system’s resilience and reliability. In 2025\, he joined CISI as a SCADA engineer to further investigate cyber vulnerabilities in OT environments\, building on his prior work in energy systems. David also serves as an instructor with the Department of Electrical Computer Engineering at Texas Tech\, teaching courses on semiconductor power devices and power converter design. \nAbstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes\, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon\, thus increasing system reliability\, efficiency\, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD)\, the design of the ultra-high voltage SiC SOS device\, several single-device testbed simulations\, and the successful simulation of a five-device series stack delivering a 100 kV\, 180 MW pulse.\n\nZOOM WEBINAR LINK
URL:https://poweramericainstitute.org/event/technical-webinar-david-graves/
CATEGORIES:Webinars
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