Dr. Ranbir Singh, founder and vice president of GeneSiC Semiconductor, a pioneer and world leader in silicon carbide technology, will speak about his company’s transition of its SiC Schottky MPSTM Diodes and MOSFETs to a 150mm foundry and other topics during the institute’s monthly webinar series on Wednesday, Dec. 5. The talk is titled, “State of the Art SiC Schottky MPS Rectifiers and High Voltage MOSFETs.”
Dr. Ranbir Singh received a Ph.D. and MS degrees in Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, and B. Tech from Indian Institute of Technology, Delhi. He founded GeneSiC Semiconductor in 2004. Prior to that he conducted research on SiC power devices first at Cree, and then at the NIST, Gaithersburg, MD. In 2012, EE Times named Dr. Singh as among “40 Innovators building the foundations of next generation electronics industry.” In 2011, he won the R&D100 award towards his efforts in commercializing 6.5kV SiC Thyristors. He has published over 160 journal and conference papers, is an author on 28 issued US patents, and has authored a book.
When: Wednesday, Dec. 5 from 12 p.m. to 1 p.m. EDT
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