Dr. Ayayi Ahyi of Auburn University will speak about his work to develop a gate dielectric process that will be an improvement on the current nitridation process and made freely available to PowerAmerica members during PowerAmerica’s monthly technical webinar series from noon to 1 p.m. EDTWednesday, June 7. Dr. Ahyi’s presentation is titled, “Development of an Open Gate Dielectric Process for SiC MOSFET Manufacturing.”
Dr. Ahyi is an Associate Research Faculty in the Auburn University Physics Department. His current work is focused on wide bandgap MOSFET interfaces, especially SiC MOSFET. Since he joined the department in 2007, Dr. Ahyi has been co-recipient of two patents, one on SiC impurity doping and the second on SiC MOS interface improvement. Read his full biography.
Meeting Number: 995 808 811
No password required
Audio Connection: 919-513-9329 (WolfMeeting)
Access Code: 995 808 811