With funding assistance from PowerAmerica, SiC device and power module company Wolfspeed has developed first-of-its-kind silicon carbide power modules for 3.3 kV and 10 kV applications. According to the company, this is the first SiC power module at these voltage levels to use exclusively the MOSFET built-in body diode as the anti-parallel rectifier.
A built-in diode has numerous advantages over an external and additional diode device. The built-in diode or “body diode” design maximizes the performance of SiC MOSFET modules by freeing up space in the power module, allowing for more power capability and therefore increased performance in a smaller space. It also makes assembling a power module easier, boosting long-term reliability and optimizing costs.
“Essentially, we’re doubling the power and therefore increasing supply chain capability by providing another solution at higher power levels – specifically at the 3.3 kV and 10 kV applications,” said Ty McNutt, director of business development at Wolfspeed’s Fayetteville, AR location.
PowerAmerica funding helped the company manufacture and test the modules. During testing, Wolfspeed was able to demonstrate the power improvement gained by not having the additional diodes.
Currently, these Wolfspeed power modules are being offered to PowerAmerica members and select customers.