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\u201cPowerAmerica is very well-aligned with USCi\u2019s business model of using SiC Foundry services, with targeted equipment investments, to develop cutting-edge SiC products. We firmly believe this is the most capital efficient, cost-effective and rapidly scalable manufacturing model for SiC products. PowerAmerica has helped USCi and XFAB make this successful at the six-inch level with its financial and overall support.\u201d -USCi<\/em><\/p>\n <\/p>\n Company Background<\/u><\/span><\/p>\n USCi, located in Monmouth Junction, NJ, manufactures and globally distributes best-in-class SiC Transistors, diodes, and custom silicon carbide devices, including Schottky diodes, SiC JFETs and SiC <\/span>cascodes.<\/span><\/p>\n USCi technology and products enable affordable power efficiency in key markets that drive a new and greener economy. Applications include <\/span>wind and solar power generation, electrification of transportation such as automobiles and <\/span>next generation trains, emerging smart grid technologies, higher efficiency power generation and conversion and motor control.\u00a0<\/span><\/p>\n PowerAmerica Partnership<\/u><\/span><\/p>\n In partnership with PowerAmerica, USCi is developing and qualifying SiC Schottky diodes 650V-1200V at XFab\u2019s 6-inch SiC foundry by transferring USCi\u2019s <\/span>high performance 4-inch processes. Additionally, USCi is developing 1200V SiC MOSFETs in the SiC foundry. <\/span>Production release for both products is planned for\u00a0early 2017.\u00a0<\/strong><\/span><\/p>\n USCi expertise can benefit members in many ways such as:<\/u><\/span><\/p>\n Initiatives in Wide Bandgap Power Electronics:<\/u><\/span><\/p>\n USCi lead the SiC Foundry business model beginning in 2010 by installing Diode and Transistor Processes at the 100mm node.\u00a0 USCi\u2019s Transistor and Schottky Diode products utilize state of the art cell technology combined with patent protected thin wafer technology to manufacture the highest performance devices in the industry.\u00a0 USCi has also developed unique Transistor Technology that can utilize a standard Si IGBT or MOSFET gate drive for <\/span>drop in and replace ease of use, or may be alternatively dual sourced into SiC MOSFET designs. \u00a0<\/span><\/p>\n Engage with us:<\/u><\/span><\/p>\n United Silicon Carbide<\/span><\/p>\n www.unitedsic.com<\/a><\/span><\/p>\n\n