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PowerAmerica has developed baseline 1200-V MOSFET and 1200-V Integrated MOSFET\/JBS SiC fabrication processes at XFAB’s 150mm SiC foundry in Lubbock, Texas that can significantly accelerate development of a company’s wide bandgap technology offerings.<\/p>\n
The processes have successfully\u00a0yielded Inversion-mode and Accumulation-mode 1.2 kV SiC Power MOSFETs as well as 1200-V SiC Integrated MOSFET\/JBS devices at XFAB.<\/p>\n
\u201cEven in a company that employs experts on silicon power devices and electronics, it can take engineers a long time to work out the design and processing details of a SiC device. The PowerAmerica processes shorten the development cycle, saving companies time and money in getting their products ready for market,\u201d said PowerAmerica CTO Victor Veliadis.<\/p>\n
According to Veliadis, the PowerAmerica model provides basic processes that companies entering the SiC industry can tailor to their specifications.<\/p>\n
\u201cIf a company wants to fabricate a SiC power device, they can run our 1.2kV SiC MOSFET production process, and then modify it to their specifications,\u201d Veliadis said.<\/p>\n
The PowerAmerica devices exhibit on-resistance, threshold voltage, leakage current, and breakdown voltage competitive with commercially available devices.<\/p>\n