{"id":6673,"date":"2018-05-01T10:01:44","date_gmt":"2018-05-01T14:01:44","guid":{"rendered":"https:\/\/poweramericainstitute.org\/?post_type=news&p=6673"},"modified":"2019-01-16T10:01:17","modified_gmt":"2019-01-16T15:01:17","slug":"dr-baliga-of-ncsu-to-present-on-sic-power-mosfet-breakthroughs-during-poweramerica-technical-webinar-series-may-1","status":"publish","type":"news","link":"https:\/\/poweramericainstitute.org\/news\/dr-baliga-of-ncsu-to-present-on-sic-power-mosfet-breakthroughs-during-poweramerica-technical-webinar-series-may-1\/","title":{"rendered":"Dr. Baliga of NCSU to Present on SiC Power MOSFET Breakthroughs During PowerAmerica Technical Webinar Series May 1"},"content":{"rendered":"
<\/p>\n
Dr. Jay Baliga<\/span> of N.C. State University will give a talk titled \u00a0“Breakthroughs in SiC Power MOSFET Technology Sponsored by PowerAmerica”\u00a0<\/a>during the institute’s monthly technical webinar<\/span> series from noon to 1 p.m. EDT on\u00a0Wednesday, May 2<\/span><\/span>.<\/p>\n Biography<\/em>
\nDr. Baliga<\/span> is the creator of the patented PRESiCE process, funded in part by PowerAmerica, and is recognized as a leading expert on power semiconductor devices. He is the inventor of the IGBT, which he commercialized at GE in the 1980s; and is considered the father of wide bandgap semiconductor power devices due to his accomplishments in the field.\u00a0Read his full biography here<\/u><\/a>.<\/u><\/p>\n