Why Wide Bandgap

Wide bandgap semiconductors permit devices to operate at much higher temperatures, voltages, and frequencies – making the power electronic modules using these materials significantly more powerful and energy efficient than those made from conventional semiconductor materials.

Harnessing these capabilities can lead to dramatic energy savings in industrial processes, data centers, and consumer devices; increase electric vehicle driving range; and help integrate renewable energy onto the electric grid.

More details about the benefits of wide bandgap technology can be found in this Department of Energy summary.

For more on the benefits of wide bandgap technologies, see the info below.

WHAT ARE POWER ELECTRONICS?

Systems that control the flow of electrical energy.

WHAT’S THE CHALLENGE?

Today’s silicon-based power devices have nearly reached their operational limits.

Meet the next generation of power electronics devices.

INVERTERS
RECTIFIERS
CONVERTERS
MODULES

Silicon carbide and gallium nitride-based semiconductors go beyond the limitations of silicon-based components. The wider band gap of Sic and GaN-based devices enables:

Higher operating temperatures, frequencies & voltages

And smaller, more efficient devices

Leading to faster switching & lower power losses
(compared to silicon)

Where is wide bandgap technology making an impact?

Silicon carbide and gallium nitride semiconductors improve the performance of power electronics systems beyond the limits of traditional silicon-based designs.