Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost.
Since its founding in 2007, Transphorm has achieved a number of milestones and industry firsts.
2009
First samples of 600V GaN-on-SiC with no current collapse/dynamic Ron
2010
First 600V GaN-on-Si
2012
First JEDEC qualified high voltage GaN
2013
IP and manufacturing partnership with Fujitsu Semiconductor Japan
2014
First generation GaN products in production
First customers in production
2015
First long-term intrinsic lifetime testing for GaN established
2016
Second generation GaN products in production
2016
Silicon Valley Center of Excellence established
Customers delivering industry-first products and systems with GaN
2017
First automotive (AEC-Q101) qualified GaN