Where: Online via Zoom
When: Wednesday, Dec. 4 from 12:00pm – 1:00pm EST
Topic: GaN FET – based Compact Converters for Pulsed Power Applications
Presenter: Dr. Harish Krishnamoorthy
Dr. Harish S. Krishnamoorthy, a Senior IEEE Member and Associate Professor at the University of Houston, holds a B.Tech. in Electrical and Electronics Engineering from NIT Tiruchirappalli and a Ph.D. in Electrical and Computer Engineering from Texas A&M University. He has extensive industry experience with GE, Schlumberger, Ford, and Google, has published over 110 research papers, and holds two U.S. patents.
An active IEEE conference organizer and Associate Editor for IEEE Transactions on Power Electronics, he has received numerous awards, including the NSF CAREER Award. His research, supported by projects totaling approximately $10 million, focuses on wide-bandgap semiconductor power systems for renewable energy, electrified transportation, and energy system reliability.
Abstract: The presentation will explore the design of power converters for pulsed power applications, focusing on high-energy, fast-response, and high-density power needs in fields like aerospace, defense, and medical technology. Starting with an overview of major applications, the talk will dive into radar and NMR spectroscopy, examining their unique power conversion demands. A 2-stage converter architecture using GaN HEMTs will be detailed, highlighting the isolated and non-isolated stages tailored for these high-performance applications. Key challenges, such as creating compact (100 W/in³), rapid-response (<1 µs), and high-temperature (>150°C) capable designs, will also be discussed.
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