PowerAmerica has issued a Request for Proposals for the latest Round #5 of Member Initiated Project funding. Responses are due June 23, 2022.

About

Member Initiated Projects (MIP) are a valuable benefit of the Institute, as they establish a process for supporting technology development that is focused on pre-competitive, yet critical needs of the broad wide bandgap community. Proposals will be accepted from members and non-members. Non-members will be required to join PowerAmerica if their proposal is selected for funding.

MIPs provide a mechanism for Institute members to collectively identify the highest priority projects that are needed to advance WBG commercialization and to direct resources to address those challenges. Successful projects yield tangible results that benefit members.

These projects are funded by member dues and other revenue-generating activities that the Institute performs (no direct federal funding). A small working group composed of members works with PowerAmerica staff to administer the MIP program.

Current Member Initiated Projects

• Silicon Carbide Power Modules for Medium Voltage Applications (University of Arkansas-Fayetteville, Microchip, NREL)
• Embedded GaN Power Module for High Frequency 400V/>20A Operation with Double-Sided Cooling and Integrated Gate-Drive Circuit (University of Tennessee-Knoxville, GaN Systems, NREL)
• SiC-based Module Building Block with Integrated Inductor and Gate Driver (Virginia Tech, Infineon, Lockheed Martin)
• Demonstration of Advanced Power Packaging Technology for Near Term Commercialization (N.C. State University, Transphorm, United SiC)

Past MIPs

• Quantifying Power Device Reliability Due to Terrestrial and Other Radiation Sources (CoolCAD Electronics)
• Reliability Analysis of Wide Bandgap Semiconductor Devices (Texas Tech/Group NIRE)
• Short-circuit Behavior and Protection of Next Generation SiC Modules (Ohio State)
• WBG Integrated High Voltage APM/OBCM Converter for Future Use in Autonomous Vehicles (Virginia Tech)
• Packaging a Top-cooled 650V/>150A GaN Power Module with Insulated Thermal Pads and Gate-Drive Circuit (University of Tennessee)
• Prototyping and Evaluation of High-Speed 10 kV SiC MOSFET Power Modules with High Scalability and System-Integration Solution (Virginia Tech/NREL/Wolfspeed)
• Surge Energy Robustness of GaN Power Devices and Modules: Application-driven Evaluation and Physics-of-Failure Modeling (Virginia Tech/Lockheed Martin)