| Where: Online via Zoom
When: Wednesday, June 3, from Noon to 1 p.m. (EDT)
Topic: Design and Simulations of a High Voltage SiC Semiconductor Opening Switch Diode
Presenter: David Graves, Ph.D., Texas Tech University
 Bio: Presenter Bio Dr. David Graves received his B.S., M.S., and Ph.D. degrees in electrical engineering from Texas Tech University. While at Texas Tech University, he conducted research with the Center for Pulsed Power and Power Electronics lab, focusing on the characterization and Technology Computer-Aided Design (TCAD) modeling of Silicon Carbide (SiC) Drift Step Recovery Diodes (DSRDs) and Semiconductor Opening Switch (SOS) Diodes. Upon completing his doctoral studies, David transitioned to a joint postdoctoral research associate position at the Global Laboratory for Energy Asset Management and Manufacturing (GLEAMM) and the Critical Infrastructure Security Institute (CISI) at Texas Tech University. In this role, he assessed cyber-physical vulnerabilities in grid-oriented systems to develop mitigation methods that could be deployed to enhance the system’s resilience and reliability. In 2025, he joined CISI as a SCADA engineer to further investigate cyber vulnerabilities in OT environments, building on his prior work in energy systems. David also serves as an instructor with the Department of Electrical Computer Engineering at Texas Tech, teaching courses on semiconductor power devices and power converter design.
Abstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon, thus increasing system reliability, efficiency, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD), the design of the ultra-high voltage SiC SOS device, several single-device testbed simulations, and the successful simulation of a five-device series stack delivering a 100 kV, 180 MW pulse.
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