| Where: Online via Zoom
When: Wednesday, May 6, from Noon to 1 p.m. (EDT)
Topic: Current Status and Prospects of Native GaN Substrate Development by Ammonothermal Method
Presenter: Tadao Hashimoto, Ph.D., MBA
CEO, Six Point Materials
 Bio: Tadao Hashimoto joined Professor Matsunami’s laboratory at Kyoto University in 1990. He was awarded a Bachelor of Electrical Engineering in 1991 and a master of electrical engineering in 1993 from Kyoto University. In 1993, he joined Panasonic and worked for 6 years as a research engineer of semiconductor lasers and metal organic chemical vapor deposition (MOCVD) of GaAs-based alloys and GaN-based alloys. From 1997 to 1999, he stayed at Stanford University as a visiting researcher working on hydride vapor phase epitaxy (HVPE) of GaN. In 1999, he left Panasonic, and in 2000 he started his Ph.D study at the University of California, Santa Barbara. He joined the ERATO Nakamura Inhomogeneous Crystal Project and started research on the ammonothermal growth of GaN. In 2005, he was awarded Ph.D in materials science from UCSB. He is the founder of SixPoint Materials, Inc. He also completed an online MBA at University of Nebraska, Lincoln, in 2020 with an emphasis on international business.
Abstract: This presentation will outline the development history of native GaN substrates and update the current status of the development by SixPoint’s near equilibrium ammonothermal (NEAT) method. Also, prospects of native GaN substrate development will be provided.
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