| Where: Online via Zoom
When: Wednesday, November 5, from Noon to 1 p.m. (EDT)
Topic: 3300 V & 2300 V SiC Trench-Assisted Planar MOSFETs and Compact Power Modules with Epoxy-Resin Potting Technology for Energy Infrastructure Applications
 Presenter: Dr. Arash Salemi, Senior Manager of Technical Marketing and SiC Technology at Navitas Semiconductor
Dr. Arash Salemi is the Senior Manager of Technical Marketing and SiC Technology at Navitas Semiconductor. Dr. Salemi’s industrial experience includes senior technical marketing and SiC device design roles at onsemi and Alpha and Omega Semiconductor. He holds a Ph.D. from KTH Royal Institute of Technology, where he developed a wide range of 4.5 kV to 15 kV SiC BJTs and PiN diodes.
His research background features postdoctoral work at Purdue University (trench-SiC MOSFETs) and the Ohio State University (SiC MOSFETs reliability). While at the OSU, he also co-developed a freely accessible online video course on Si and WBG Power Devices for the Consortium of Universities for Sustainable Power (CUSP).
Dr. Salemi holds two M.Sc. degrees, one in Physics and one in Nanotechnology. He was on the organization committee in ICSCRM 2024 and served as the technical editor for the proceedings.
Abstract: Navitas Semiconductor is advancing the next generation of mission-critical high-voltage Wide Bandgap (WBG) power semiconductor technology, which is enabling the modernization of energy infrastructure in data centers, utility-scale battery energy storage systems (BESS), EV megawatt charging systems (MCS), and renewable energy systems like solar and wind. This presentation details our state-of-the-art new generation 3300 V and 2300 V SiC MOSFETs, highlighting the benefits of our novel GeneSiC™ Trench-Assisted Planar (TAP) architecture and compact SiCPaK™ power modules with epoxy-resin potting technology – essential for highly efficient and reliable power electronics systems.Furthermore, we will present a technical preview to showcase further expansion into higher-voltage power semiconductor technologies, including the results of our 6500 V SiC MOSFETs – demonstrating Navitas’ commitment to enabling future generations of power electronic systems.
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