| Where: Online via Zoom
When: Wednesday, July 1, from Noon to 1 p.m. (EDT)
Topic: Enabling WBG and UWBG Devices with High-Deposition-Rate, Efficient ALD
Presenter: Dr. Matt Weimer, Forge Nano
Bio
 Dr. Matt Weimer is a surface chemist specializing in atomic layer deposition (ALD) for both wafer-scale and powder applications. He began his career at the Illinois Institute of Technology,
completing a PhD in Chemistry while holding a graduate appointment at Argonne National Laboratory (ANL). His doctoral work focused on synthesizing novel ALD precursors and pioneering the use of in situ X-ray absorption spectroscopy (XAS) to elucidate surface reaction mechanisms.
Following a postdoctoral appointment at ANL in fundamental battery research, Dr. Weimer joined Lam Research in New Products Development, contributing to next-generation process technologies. For the past five years, he has led the wafer development team at Forge Nano, overseeing applications development, customer demonstrations, and the company’s wafer-scale ALD laboratories. He played a central role in launching TEPHRA, Forge Nano’s ALD cluster platform uniquely designed for the More-than-Moore market.
Abstract: This presentation details the modeling efforts conducted in Silvaco Victory Device at Texas Tech University on ultra-high voltage SiC SOS diodes, demonstrating the viability of transition to wide-bandgap semiconductors for pulsed-power electronics applications. The transition to SiC SOS diodes is advantageous in pulsed power systems as it offers up to a 20x reduction in required devices compared to silicon, thus increasing system reliability, efficiency, and power density. Featured in this presentation is the physical characterization and modeling of a SiC drift step recovery diode (DSRD), the design of the ultra-high voltage SiC SOS device, several single-device testbed simulations, and the successful simulation of a five-device series stack delivering a 100 kV, 180 MW pulse.
Abstract
Atomic layer deposition (ALD) has repeatedly transformed microelectronics manufacturing, from enabling high-k gate dielectrics in logic to making 3D NAND architectures possible, by delivering high-quality, conformal films where faster deposition techniques fall short. A similar inflection point is emerging in wide band gap (WBG) and ultra-wide band gap (UWBG) devices. ALD first entered these markets as a high-quality environmental barrier for GaN and GaAs, but its advantages in thickness control, conformality, and dielectric performance are now driving broader adoption in GaN power/RF and SiC devices. As trench devices emerge and performance requirements heighten, ALD is increasingly evaluated for roles such as high-quality dielectrics, passivation layers, and interface defect reduction. However, concerns remain around whether ALD can meet high-volume manufacturing (HVM) throughput and cost targets. To address these challenges, Forge Nano has developed a high-efficiency, single-wafer thermal ALD solution for 200 mm and smaller wafers, integrated into a modern cluster platform designed for manufacturability and serviceability. Beyond established moisture-barrier applications in WBG devices, we are advancing high-quality dielectric ALD films for GaN and SiC power electronics and extending this work to emerging UWBG materials such as diamond and Ga₂O₃.
This talk will highlight how the Forge Nano TEPHRA ALD cluster tool achieves higher deposition rates with significantly improved precursor utilization, enabling cost-effective ALD for the WBG and UWBG markets. Data on moisture-barrier performance and dielectric properties on device-relevant substrates will be compared against incumbent solutions. Finally, we will explore future device architectures and applications uniquely enabled by high-deposition rate and efficient ALD.
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