| Where: Online via Zoom
When: Wednesday, September 2, from Noon to 1 p.m. (EDT)
Topic: High-Efficiency, Cost-Optimized Hybrid ANPC Power Module Using SiC and IGBT Technologies
Presenter: L Prasad Paruchuri, onsemi
Bio
Prasad Paruchuri is the Technical Marketing Team Lead of the Industrial PSG Business Unit at onsemi where he is driving innovative EliteSiC family products for AI Cloud Power conversion and Industrial applications. Prasad brings over 28 years of semiconductor experience in areas that span from Application development; System Solutions Marketing and Strategic Marketing of New Technology @ STMicroelectronics (15 Years) and onsemi (13 Years). Prior to that Prasad worked as Power supply Design Engineer at ASTEC Custom Power (Advanced Energy).
In his spare time Prasad watches basketball games with friends and family. Prasad discusses politics related to environment; community development and supports antiwar policies.
Abstract
This Presentation compares a 80-100 kW/phase, 690 Vac to 1500 Vdc Power Conversion System (PCS) implemented using two different approaches:
- Hybrid ANPC Module based on the onsemi NXH270A120M3F5 integrating 1200 V SiC MOSFETs and 1200 V Field Stop 7 IGBTs in a three-level Active Neutral Point Clamped (ANPC) topology.
- 2-Level Full-SiC Inverter using a 2.3 kV, 5 mΩ Half-Bridge SiC Module operating directly from the 1500 V DC bus.
The study shows that the Hybrid ANPC architecture effectively leverages the complementary strengths of silicon IGBTs and SiC MOSFETs. The IGBTs provide cost-effective low-frequency current conduction, while the SiC MOSFETs handle high-frequency switching transitions and freewheeling intervals, significantly reducing switching losses and EMI. In contrast, the 2.3 kV full-SiC two-level inverter benefits from simpler circuit implementation and superior voltage margin, but experiences higher dv/dt stress, larger filter requirements, and increased converter losses due to the full 1500 V switching transitions.
For utility-scale ESS applications, the Hybrid ANPC approach offers an optimal balance of efficiency, cost, manufacturability, and scalability while maintaining performance approaching full-SiC solutions.
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