Why Wide Bandgap

According to the U.S. Department of Energy, wide bandgap semiconductors permit devices to operate at much higher temperatures, voltages, and frequencies – making the power electronic modules using these materials significantly more powerful and energy efficient than those made from conventional semiconductor materials.

Harnessing these capabilities can lead to dramatic energy savings in industrial processes, data centers, and consumer devices; increase electric vehicle driving range; and help integrate renewable energy onto the electric grid.

In turn, this results in tangible environmental benefits, as captured in this infographic produced by the U.S. Department of Energy.

For more on the benefits of wide bandgap technologies, see the info below.

Systems that control the flow of electrical energy.
Today’s silicon-based power devices have nearly reached their operational limits.
Meet the next generation of power electronics devices.
Silicon carbide and gallium nitride-based semiconductors go beyond the limitations of silicon-based components. The wider band gap of Sic and GaN-based devices enables:
Higher operating temperatures, frequencies & voltages
And smaller, more efficient devices
Leading to faster switching & lower power losses
(compared to silicon)

Where is wide bandgap technology making an impact?

Silicon carbide and gallium nitride semiconductors improve the performance of power electronics systems beyond the limits of traditional silicon-based designs.


Precision variable-speed drives & high temperature operation

Electric Utilities

A more resilient, secure energy grid

Electric Transportation

Efficient charging & increased range

Renewable Energy

Higher efficiencies in power conversion


Smaller, faster, lighter, & more rugged power electronics

PowerAmerica leadership discuss the importance of the Institute and wide bandgap semiconductors