Member Projects & Initiatives

Learn more about the projects recently completed in the institute’s second full year of operation on pages 11-48 of our annual report.

Projects currently underway are:

Foundry and Device Development

  • SiC Power Device Commercial Foundry Development (X-FAB Texas)
  • Development of a Manufacturable Gen3, 6.5 kV/100 mOhm MOSFET (Cree/Wolfspeed)
  • Commercialization of 1700V SiC Schottky Diodes (Monolith)
  • Lower Cost Foundry Process for 1.2 kV SiC Planar Gate Power MOSFETs and JBS Rectifiers (NCSU)
  • 1.2 kV SiC Shielded Trench Gate Power MOSFETs (NCSU)
  • 3 kV SiC MOSFET Development (GeneSiC)
  • 7 kV/3.3 kV SiC MOSFET Scaleup (Microsemi)
  • Development of 3.3 kV/6.5 kV/10 kV SiC MOSFETs, JBS Diodes and JBS Diode Integrated MOSFETs (SUNY)
  • Advanced SiC Trench MOSFETs: A Path to Record-Low Ron,sp and Record-Law ($/A) (Sonrisa Research)
  • Manufacturable, Cost Effective, Low RON-SP 3.3 kV SiC DMOSFETs (Global Power)

Module Development and Manufacturing

  • High Voltage 6.5 kV and 10 kV Power Module Commercialization and Manufacturing (Cree – Fayetteville)
  • Developing a BPD-Free Room Temperature Al Implant and Activtation Anneal Process for P-Wells in SiC MOSFETs (NRL)
  • Reliability Analysis of Wide Bandgap Power Devices (Texas Tech)

Commercialization Applications

Education and Workforce Development

  • Documentation of Design and Process of GaN Power HEMTs (Rensselaer Polytechnic Institute)